The high end ICPECVD system SI 500 D provides exceptional performance for plasma based deposition processes. High quality dielectric and Si films are deposited using high density PECVD generated with the PTSA ICP plasma source. The planar triple spiral antenna (PTSA) ensures excellent properties of the deposited films, such as low etching rates, low stress and low interface state density at very low deposition temperatures (≤ 100 °C). Details for SI 500 D here!
The flexible PECVD system SI 500 PPD features a variety of standard plasma deposition processes. SiO2, SiNx, SiOxNy, and a-Si are deposited with capacitively coupled plasma. The flexible design allows to use gaseous or liquid precursors for PECVD like TEOS. Details for SI 500 PPD here!
The PECVD system Depolab 200 combines cost effective direct loading and parallel plate plasma source in a basic, compact design. The easy to use direct loading system enables user-friendly batch processing (with carrier or direct loading onto the substrate electrode). The clever PECVD system can be upgraded for enhanced performance on demand. Details for Depolab 200 here!